Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...

At the Applied Power Electronics Conference & Exposition (APEC 2025), celebrating its 40th year, over 300 exhibitors showcased their latest component advances for system power designers across a wide ...

The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...

Network traffic is growing at an exponential rate due to the growing popularity of mobile computing devices. As a result, there are continuous rollouts around the world of next-generation wireless ...

Researchers have demonstrated a significant performance increase in cooling technology for high-power electronic devices. They designed novel capillary geometries that push the boundaries of thermal ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Scientists from the RIKEN Center for Emergent Matter Science and colleagues have developed a new way to fabricate ...