A special type of diode made from a crystalline material whose layers are just three atoms thick has been successfully realized for the first time. The superior properties of such ultra-thin crystals ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

As electronics approach the atomic scale, researchers are increasingly successful at developing atomically thin, virtually two-dimensional materials that could usher in the next generation of ...