A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...
In the semiconductor industry, the use of radiation-hardened power MOS devices to avoid latchup is less common than hardening logic and memories to avoid single-event upsets. Going the less-traveled ...
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