PORTLAND, Ore. — Electronics devices using ferroelectric transistors would turn on instantly without the need to boot from flash or hard-disk memories. Such ferroelectric transistors would likely use ...

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

A new technical titled “Impact of Random Phase Distribution on Ferroelectric Tunnel Field-Effect Transistors With Mitigation Strategies for Compute-in-Memory Applications” was published by researchers ...

Tokyo, Japan – Scientists from the Institute of Industrial Science at The University of Tokyo fabricated three-dimensional vertically formed field-effect transistors to produce high-density data ...

A limiting problem in creating energy-efficient circuits for improved memory and more powerful computers is manufacturing a transistor with reconfigurable properties. As the size of transistors ...

A small team of researchers at MIT's Materials Research Laboratory have developed a transistor that's just as good as those used to make flash memory chips, but with the added advantage of not wearing ...

In a nutshell: Back in 2021, a team from the Massachusetts Institute of Technology made waves by creating an entirely new type of ferroelectric material. Now, those same researchers have one-upped ...